switching diode dan222m ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) ultra high speed switching ? features 1) ultra small mold type. (vmd3) 2) high reliability. ? construction ? structure silicon epitaxial planar ? taping specifications (unit : mm) ?absolute maximum ratings (ta=25c) symbol unit v rm v v r v i fm ma io ma i surge a pd mw tj c tstg c ?electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - - 1.2 v i f =100ma i r - - 0.1 a v r =70v ct - - 3.5 pf v r =6v , f=1mhz trr - - 4 ns v r =6v , if=5ma , rl=50 ? reverse recovery time parameter forward voltage reverse current capacitance between terminals storage temperature ? 55 to ? 150 power dissipation 150 junction temperature 150 average rectified forward current (single) 100 surge current (t=1us) 4 reverse voltage (dc) 80 forward voltage (single) 300 parameter limits reverse voltage (repetitive peak) 80 vmd3 rohm : vmd3 dot (year week factory) 0.45 0.4 1.15 0.4 0.8 0.45 0.5 1.20.1 0.80.1 0.50.05 0.130.05 0.220.05 (3) 1.20.1 0.4 0.4 (1) (2) 0.220.05 0.320.05 00.1 1.30.05 0 (4.00.1) 4.00.07 2.00.04 1.550.05 3.50.05 1.750.07 8.00.1 0.30.1 0.60.05 0 0.50.05 2.00.05 1.350.05 0 5.50.2 00.1 1/2 2011.06 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
dan222m 0 1 2 3 4 5 6 7 8 9 10 ave:1.93ns ta=25 vr=6v if=5ma rl=50 n=10pcs forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) trr dispersion map reverse recovery time:trr(ns) electrostatic ddischarge test esd(kv) esd dispersion map 0.1 1 10 100 0 100 200 300 400 500 600 700 800 900 1000 ta=-25 ta=125 ta=75 ta=25 ta=150 0.01 0.1 1 10 100 1000 10000 0 1020304050607080 ta=125 ta=-25 ta=25 ta=75 ta=150 0.1 1 10 0 5 10 15 20 f=1mhz 900 910 920 930 940 950 ave:921.7mv ta=25 if=100ma n=30pcs 0 10 20 30 40 50 60 70 80 90 100 ta=25 vr=80v n=10pcs ave:9.655na 0 5 10 15 20 ave:3.50a 8.3ms ifsm 1cyc 0 1 2 3 4 5 110100 8.3ms ifsm 1cyc 8.3ms 1 10 100 0.1 1 10 100 t ifsm 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 rth(j-a) rth(j-c) 1ms im=1ma if=10ma 300us time mounted on epoxy board 0 1 2 3 4 5 6 7 8 9 10 ave:0.97kv c=200pf r=0 c=100pf r=1.5k ave:2.54kv 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 ave:1.071pf ta=25 vr=6v f=1mhz n=10pcs 2/2 2011.06 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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